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Updated: Jun 23, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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用高分辨率的STEM-EELS探测六角化中光学辐射和缺陷位置的相关性

Sakal Singla1, Pragya Joshi1, Gabriel I López-Morales2

  • 1Department of Physics, Indian Institute of Technology Jammu, Jammu 181221, India.

Nano letters
|June 18, 2024
PubMed
概括

研究人员确定了碳替代物作为六角化 (hBN) 中单光子发射物的可能来源. 这一发现有助于理解和控制这些明亮的光学缺陷,用于未来的应用.

关键词:
在 DFT 方面,它是最重要的.声音的声音.碳 碳 碳 碳 碳 碳缺陷 缺陷 缺陷 缺陷 缺陷hBNBN 在线阅读

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Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization07:50

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相关概念视频

Scanning Electron Microscopy01:07

Scanning Electron Microscopy

A scanning electron microscope (SEM) is used to study the surface features of a sample by using an electron beam that scans the sample surface in a two-dimensional manner. Typically, areas between ~1 centimeter to 5 micrometers in width can be imaged. SEM can be used to image bacteria, viruses, tissues as well as larger samples like insects. Conventional SEM gives a magnification ranging from 20X to 30,000X and spatial resolution of 50 to 100 nanometers.
Fundamental Principles
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