在一个长波红外 HgCdTe Auger-抑制光二极管的缺陷分析
Małgorzata Kopytko1, Kinga Majkowycz1, Krzysztof Murawski1
1Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland.
Sensors (Basel, Switzerland)
|June 19, 2024
概括
长波红外 (LWIR) HgCdTe光二极管的深层缺陷被使用深层瞬态光谱学 (DLTS) 和光发光学 (PL) 确定. 发现,空位 (VHg) 是这些LWIR装置中暗电流增加的主要原因.
科学领域:
- 半导体物理 半导体物理
- 材料科学 材料科学 材料科学
- 光电学是指光电子产品.
背景情况:
- 在长波红外 (LWIR) 光二极管应用中,HgCdTe的异构结构至关重要.
- 了解深层缺陷对于优化光二极管性能和减少暗电流至关重要.
研究的目的:
- 为了描述LWIR HgCdTe光二极管的深层缺陷.
- 为了确定导致暗电流增加的特定缺陷.
- 为了确定这些缺陷的物理参数.
主要方法:
- 金属有机化学蒸汽沉积 (MOCVD) 用于光电极制造.
- 深层瞬态光谱 (DLTS) 用于缺陷能量水平和度测量.
- 光发光 (PL) 光谱用于缺陷验证和能量水平的确定.
主要成果:
- 确定了两个缺陷:一个电子陷 (252 meV) 和一个孔陷 (89 meV).
- 被归因于空缺 (VHg) 的洞陷被发现是导致暗电流的主要原因.
- 确定了VHg陷的特定参数:捕获截面 (σ = 10−164 × 10−15 cm2) 和度 (N = 34 × 1014 cm−3).
结论:
- 水银空缺 (VHg) 是LWIR HgCdTe光二极管的一个重大缺陷.
- VHg缺陷直接增加暗电流,影响设备性能.
- 详细的表征提供了在未来的HgCdTe光二极管设计中减轻暗电流的关键数据.
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