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Updated: Jun 23, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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基于层级磁化对内部缺陷进行双面扫描的深度尺寸的评估

Zhiyang Deng1, Dingkun Qian1, Haifei Hong1

  • 1Key Lab of Modern Manufacture Quality Engineering, Hubei University of Technology, Wuhan 430068, China.

Sensors (Basel, Switzerland)
|June 19, 2024
PubMed
概括

这项研究引入了一种新的磁性方法,用于准确测量钢管内部缺陷深度. 通过分层磁化,它可以精确地确定缺陷尺寸,提高安全性并减少材料浪费.

关键词:
缺陷大小评估 缺陷大小评估铁磁材料是一种铁磁材料.磁透性扰动的磁性透性扰动渐进的磁化 渐进的磁化

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相关概念视频

Scanning Electron Microscopy01:07

Scanning Electron Microscopy

A scanning electron microscope (SEM) is used to study the surface features of a sample by using an electron beam that scans the sample surface in a two-dimensional manner. Typically, areas between ~1 centimeter to 5 micrometers in width can be imaged. SEM can be used to image bacteria, viruses, tissues as well as larger samples like insects. Conventional SEM gives a magnification ranging from 20X to 30,000X and spatial resolution of 50 to 100 nanometers.
Fundamental Principles
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