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Updated: Jun 23, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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在化学异质的氧化瓦纳晶体中离散电阻切换的起源

B Raju Naik1, Yadu Chandran1, Kakunuri Rohini1

  • 1School of Mechanical and Materials Engineering, Indian Institute of Technology, Mandi, Himachal Pradesh, 175075, India. viswa@iitmandi.ac.in.

Materials horizons
|June 19, 2024
PubMed
概括

氧化瓦纳晶体表现出离散的值切换电压,使低能量的神经形态设备成为可能. 这一发现源于对新型固态应用的V:O固态度和化学异质性进行调整.

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MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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