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Updated: Jun 23, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

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齐格扎克氧化纳米丝带与碳原子合,用于基于纳米设备的巨型磁阻和整顿行为

Rigao Wang1, Feng Shuang2, Mingsong Lin3

  • 1Guangxi Key Laboratory of Intelligent Control and Maintenance of Power Equipment, School of Electrical Engineering, Guangxi University, Nanning, 530004, China.

Scientific reports
|June 19, 2024
PubMed
概括

碳兴奋剂将状的化纳米带 (ZBNNRs) 转化为旋转器件,表现出巨型磁阻 (GMR) 和旋转纠正. 这项研究推进了高性能纳米级旋转电子学.

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Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

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Iron Nanowire Fabrication by Nano-Porous Anodized Aluminum and its Characterization

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相关概念视频

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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