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基于超宽带隙半导体的太阳盲光探测器的最新进展

Lixia Wang^1,2, Shengming Xu¹, Jiangang Yang²

¹School of Future Technology, Henan Key Laboratory of Quantum Materials and Quantum Energy, Henan University, Zhengzhou 450046, P. R. China.

|June 24, 2024

概括

超宽带间隙半导体使高级太阳盲光探测器能够用于关键应用. 这篇评论详细介绍了他们的进展,设备类型以及紫外线检测的未来研究方向.

科学领域:

材料科学材料科学材料科学
固态物理固态物理
光电学是指光电子产品.

背景情况:

超宽带隙 (UWBG) 半导体 (例如,Ga2O3,钻石,AlGaN/AlN) 的带隙>4.4 eV.
这些材料对于太阳盲紫外线 (UV) 光检测至关重要.
应用包括环境监测,化学分析,工业过程和军事技术.

研究的目的:

综合审查UWBG半导体式太阳盲光探测器 (SBPD) 的最新进展.
系统地介绍和讨论各种SBPD设备架构的操作原理.
通过UWBG材料评估SBPD的当前表现,并确定未来的研究挑战.

主要方法:

关于UWBG半导体合成和SBPD开发的文献综述.
对各种设备架构 (光导体,MSM,Schottky,p-n/p-i-n光二极管,光晶体管) 的分析.
评估不同配置的设备性能指标.

主要成果:

在合成高质量的UWBG半导体方面取得的重大进展使得高性能SBPD成为可能.
不同的设备架构展示了太阳盲紫外线检测的有希望的能力.
目前的性能水平通过不同的UWBG材料和设备类型进行评估.

结论:

UWBG半导体是先进的太阳盲UV光检测的关键推动者.
需要继续进行研究,以克服现有的挑战,并进一步提高SBPD的绩效.
本综述为这一关键领域的未来研究提供了路线图.

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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...