低损失埋藏的InGaAs/InP集成导波器在长波红外线中
Miguel Montesinos-Ballester1, Elsa Jöchl1, Victor Turpaud2
1Institute for Quantum Electronics, ETH Zürich, CH-8093 Zürich, Switzerland.
概括
我们使用甲 (InGaAs) 波导开发了一个新的光子集成平台. 该平台在广泛的中红外光谱中表现出较低的传播损失,使集成的中红外系统成为可能.
科学领域:
- 光子学 是一个光子学.
- 材料科学 材料科学 材料科学
- 光电学是指光电子产品.
背景情况:
- 光子集成电路 (PIC) 对于先进的光学系统至关重要.
- 中红外 (中红外) 光子学需要专门的材料来有效地操纵光线.
- 化 (InP) 和化 (InGaAs) 是光电子中的关键材料.
研究的目的:
- 为中红外应用提供一个新的光子集成平台.
- 为了在波导中在广泛的光谱范围内实现低传播损失.
- 为了使中红外光源与波导单体集成.
主要方法:
- 埋藏的InGaAs波导与InP覆盖的制造.
- 使用湿蚀刻图案和铁 (Fe) 染用于波导的定义.
- 在中红外光谱 (4.611.2μm) 中传播损失的表征.
主要成果:
- 在横向电 (TE) 和横向磁 (TM) 模式下,实现的传播损失低于1.2 dB/cm (0.3 cm-1).
- 在一个很大的中红外光谱范围 (4.611.2μm) 上经过证明的操作.
- 证实了两种偏振的低损失.
结论:
- 开发的InGaAs/InP平台在中红外线中提供了高效的光传播.
- 这项技术适用于创建宽带,均集成的中红外系统.
- 与中红外源的单体集成是一个有前途的未来方向.
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