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Updated: Jun 23, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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通过接口工程增强单层MoSe2的载体扩散

Kun Zhao1, Dawei He1, Xiaojing Liu1

  • 1Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.

ACS applied materials & interfaces
|June 24, 2024
PubMed
概括

接口工程显著提高了二维材料的性能,例如单层二化 (ML MoSe2) 场效应晶体管 (FET). 使用自组装单层来修改接口,可以提高先进电子产品的载体移动性.

关键词:
接口工程 接口工程 接口工程移动性是一种流动性.一个单层的MoSe2-探头技术的技术.自组装的单层单层.

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相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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