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Updated: Jun 23, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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Published on: November 28, 2017

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兴奋剂和缺陷对MoS2/WSe2双层异构的电子特性的影响:一项第一原则研究

Xingliang Wang1, Guijuan Zhao1, Xiurui Lv1

  • 1School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China. zhaogj@lzu.edu.cn.

Physical chemistry chemical physics : PCCP
|June 24, 2024
PubMed
概括

这项研究探讨了WSe2中兴奋剂和缺陷如何影响MoS2/WSe2异构结构. 结果显示可调节的电子特性,使先进的光电子设备成为可能.

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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