单层FeSe/SrTiO3中的原子位置依赖配对间隙 (001) - √13 × √13)
Cui Ding1,2, Zhongxu Wei3, Wenfeng Dong1
1State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China.
Nano letters
|June 25, 2024
概括
铁化物 (FeSe) 和二氧化 (TiO2-δ) 之间的接口使FeSe膜具有高温超导性. 原子尺度分析揭示了格子合和电子变异如何影响这种超导配对间隙.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 表面科学是一门学科.
背景情况:
- 单层FeSe薄膜的高温超导性受到界面合的强烈影响.
- 了解FeSe/TiO2-δ异构中超导性背后的原子尺度机制至关重要.
研究的目的:
- 研究SrTiO3基板上的单层FeSe薄膜中的原子位置依赖电子特性和超导配对间隙.
- 阐明该系统中晶格电子合和超导之间的关系.
主要方法:
- 低温的原子分辨率扫描道显微镜/光谱 (STM/STS).
- 在原子层面分析状态的表面密度 (DOS),工作函数和配对间隙.
主要成果:
- 通过 (√13 × √13) 表面图案调节的DOS,工作函数和配对间隙的原子位置依赖变化.
- 识别出不平面的Se-Fe-Se三层梯度和不等价的Fe子层.
- 证明了连贯格子合,反向不对称性,平面内异构性和连贯峰中的粒子孔不对称性之间的相关性.
结论:
- 接口FeSe/TiO2-δ合在高温超导性中起着至关重要的作用.
- 原子级电子和晶格特性与超导配对机制密切相关.
- 结果提供了关于巴丁-库珀-施里弗到斯-爱因斯坦凝结交叉模式和多轨道超导的见解.
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