相关实验视频

Updated: Jun 21, 2026

Fabrication of White Light-emitting Electrochemical Cells with Stable Emission from Exciplexes
05:51

Fabrication of White Light-emitting Electrochemical Cells with Stable Emission from Exciplexes

Published on: November 15, 2016

8.0K

通过稳定其八面体结构来制造红色发射的矿LED

Lingmei Kong1, Yuqi Sun2, Bin Zhao3

  • 1Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, China.

Nature
|June 25, 2024
PubMed
概括

No abstract available in PubMed .

更多相关视频

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
08:12

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on: September 8, 2017

9.6K
Inkjet Printing All Inorganic Halide Perovskite Inks for Photovoltaic Applications
07:42

Inkjet Printing All Inorganic Halide Perovskite Inks for Photovoltaic Applications

Published on: January 22, 2019

11.1K

相关实验视频

Last Updated: Jun 21, 2026

Fabrication of White Light-emitting Electrochemical Cells with Stable Emission from Exciplexes
05:51

Fabrication of White Light-emitting Electrochemical Cells with Stable Emission from Exciplexes

Published on: November 15, 2016

8.0K
Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
08:12

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on: September 8, 2017

9.6K
Inkjet Printing All Inorganic Halide Perovskite Inks for Photovoltaic Applications
07:42

Inkjet Printing All Inorganic Halide Perovskite Inks for Photovoltaic Applications

Published on: January 22, 2019

11.1K

相关概念视频

Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
JoVE
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策
Jove
Visualize
联系我们