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在纳米板场效应晶体管中精确评估电热性能,并设置控制寄生底部晶体管的方案

Jinsu Jeong¹, Sanguk Lee¹, Rock-Hyun Baek¹

¹Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.

Nanomaterials (Basel, Switzerland)

|June 26, 2024

概括

沟内部隔离器 (TIS) 方案有效控制纳米板场效应晶体管 (NSFET) 中的寄生底部晶体管. TIS提供优越的电热性能,特别是在更高的容量下,使其成为先进的3nm以下节点的理想选择.

科学领域:

材料科学与工程材料科学与工程
半导体设备物理半导体设备物理
电气工程电气工程

背景情况:

纳米板场效应晶体管 (NSFET) 对于下一代电子产品至关重要.
管理寄生式底部晶体管 (tr) 及其电热效应对于设备性能至关重要.
现有的控制方案,如沟内部隔离器 (TIS) 和底氧化物 (BOX),需要进行详细的评估.

研究的目的:

用不同的寄生底晶体管 (tr) 控制方案评估和比较NSFET的电热性能.
分析这些方案对单一设备和电路级操作的影响.
为了确定对3nm以下节点NSFETs最合适的方案.

主要方法:

研究传统的穿孔塞,TIS和BOX系统.
单个设备的评估,以评估温度差异和RC延迟.
使用环振荡器与3D混合模式模拟进行电路级评估.

主要成果:

与单个设备级别的BOX相比,TIS方案可以显著降低设备温度 (59.6K对于nFET,50.4K对于pFET).
通过更高的TIS高度,TIS性能是最佳的,防止由于过度刻画的S/D深度 (T) 导致门容量 (C) 的增加.
在电路层面,TIS显示的设备温度略低于BOX,优势随负载容量 (C) 增加而增加.

结论:

该TIS方案显示了在NSFET中控制寄生底部晶体管 (tr) 的优异电热性能.
在缓解热问题方面,TIS特别有效,特别是在更高负载电容条件下.
推TIS方案用于先进的3nm以下节点NSFET,以提高整体性能和可靠性.

关键词:

这是一个TCAD模拟.电热性能电热性能电热性能门-四周所有的人.格子的温度格子的温度.纳米板 FET 的使用.寄生式底部晶体管寄生式底部晶体管环振荡器是指一个环振荡器.自热效应的自热效应.亚-3 纳米节点节点.沟内部的隔离器

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