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在CaF₂基二维材料MOSFET中区分电荷捕获中心

Zhe Zhao^1,2, Tao Xiong², Jian Gong^1,3

¹School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China.

Nanomaterials (Basel, Switzerland)

|June 26, 2024

概括

晶体化 (CaF2) 对二维材料MOSFET显示有前途,但面临可靠性问题. 氧吸附被确定为导致这些问题的关键因素,需要真空包装和高质量的材料制备.

科学领域:

材料科学材料科学材料科学
半导体物理半导体物理
纳米技术纳米技术

背景情况:

晶体化 (CaF2) 是用于二维材料MOSFET的有希望的门介电,由于其优越的介电常数,更宽的带间隙和较低的缺陷密度,其性能优于化和二氧化 (SiO2).
尽管有优点,但基于CaF2的MOSFET表现出显著的可靠性问题,根本原因尚未完全理解.

研究的目的:

为了研究CaF2/MoS2和CaF2/MoSi2N4接口的内在缺陷和吸附物.
为了确定基于CaF2的2D材料MOSFET中最活跃的电荷捕获中心.
阐明吸附剂对设备性能和类型转换的影响.

主要方法:

使用第一原则计算来研究缺陷和吸附物行为.
分析的重点是CaF2与二硫化物 (MoS2) 和二四化物 (MoSi2N4) 的接口.
对n型和p型设备的缺陷活动进行了比较.

主要成果:

内部缺陷和吸附氧分子 (O2) 被确定为重要的电荷捕获中心.
吸附的O2分子被发现与内在缺陷一样活跃.
氧吸附被证明可以自发地将MoSi2N4转化为p型.

结论:

基于CaF2的2D MOSFET的可靠性问题受到吸附氧气的显著影响.
高真空包装对于减轻氧气吸附的影响至关重要.
准备高质量的2D材料对于提高设备性能至关重要.

关键词:

2D 材料的 MOSFET 是一个 2D 材料的 MOSFET.在 CaF2 的情况下.充电陷可以捕捉到.可靠性的可靠性

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