Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

Scanning Electron Microscopy01:07

Scanning Electron Microscopy

4.2K
A scanning electron microscope (SEM) is used to study the surface features of a sample by using an electron beam that scans the sample surface in a two-dimensional manner. Typically, areas between ~1 centimeter to 5 micrometers in width can be imaged. SEM can be used to image bacteria, viruses, tissues as well as larger samples like insects. Conventional SEM gives a magnification ranging from 20X to 30,000X and spatial resolution of 50 to 100 nanometers.
Fundamental Principles
Accelerated...
4.2K
Fermi Level Dynamics01:12

Fermi Level Dynamics

235
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
235
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

332
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
332

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Directly probing the carrier transfer length in 2D-material transistors.

Nature·2026
Same author

HP1γ promotes the progression of colorectal cancer through interaction with RBPJ of the Notch signaling pathway.

Cell biology and toxicology·2026
Same author

Decarboxylative carbonyl alkylative amination: A general and practical strategy for aliphatic amine synthesis.

Science advances·2026
Same author

Triploidy is prominent in the duckweed Lemna minor complex.

Communications biology·2026
Same author

From KBa<sub>4</sub>Ge<sub>3</sub>S<sub>10</sub>Cl to ABa<sub>3</sub>EuGe<sub>3</sub>S<sub>11</sub> (A = Na, K) Synthesized by Reactive Flux Assisted Metal Oxide-Boron-Chalcogen (MOBQ) Method: Effect of Cation/Anion Cosubstitution on Crystal Structure and Nonlinear Optical Properties.

Inorganic chemistry·2026
Same author

Selective Defect Engineering for Gate-Controlled yet Contact-Transparent Bi<sub>2</sub>O<sub>2</sub>Se Transistors.

ACS nano·2026
Same journal

Vertically Stacked Indium Gallium Zinc Oxide-Based Three-Dimensional Integrated Circuits.

ACS nano·2026
Same journal

Tunable Nanoparticle Thin-Film Reveals Distance Dependence of Auger-Mediated Radiation Enhancement in Diffuse Midline Glioma.

ACS nano·2026
Same journal

G-Quadruplex Network Engineering in Ionogels: Realizing Robust Biosensing Interfaces for Plant Electrophysiology.

ACS nano·2026
Same journal

Announcing the 2026 <i>ACS Nano</i> Lectureship and <i>ACS Nano</i> Impact Award Laureates.

ACS nano·2026
Same journal

Ultrafast Self-Assembly of Zeolitic Imidazolate Framework-8 Enables Antibody Orientation for Ultrasensitive Lateral Flow Immunoassays.

ACS nano·2026
Same journal

Interfacial Salt Engineering with Alkali and Ammonium Additives for Stable Pure-Blue Perovskite Light-Emitting Diodes and Micropatterned Displays.

ACS nano·2026
查看所有相关文章

相关实验视频

Updated: Jun 23, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

13.8K

在2D半导体中原子解决的缺陷工程分散潜力.

Hao-Yu Chen1, Hung-Chang Hsu2, Jhih-Yuan Liang2

  • 1Graduate School of Advanced Technology, National Taiwan University, Taipei 10617, Taiwan.

ACS nano
|June 26, 2024
PubMed
概括
此摘要是机器生成的。

研究人员设计了过渡金属二甲基化物 (TMD) 的原子尺度缺陷,以了解电子缺陷相互作用. 这种缺陷工程改善了下一代电子技术的载体运输.

关键词:
原子缺陷工程是原子缺陷工程.间隔准粒子干扰的间隔时间.阶段转移的阶段转移.扫描道显微镜的扫描方法过渡金属二甲基二甲基化物.

更多相关视频

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
07:24

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

Published on: May 10, 2021

6.0K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

9.6K

相关实验视频

Last Updated: Jun 23, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

13.8K
Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
07:24

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

Published on: May 10, 2021

6.0K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

9.6K

科学领域:

  • 材料科学 材料科学 材料科学
  • 凝聚物质物理学 凝聚物质物理学
  • 纳米技术纳米技术

背景情况:

  • 原子级缺陷工程对于在电子领域推进过渡金属二甲基化物 (TMD) 材料至关重要.
  • 了解电子缺陷相互作用对于优化TMD中的载体运输至关重要.

研究的目的:

  • 研究不同原子尺度缺陷如何影响TMD中的电子散射.
  • 揭示电子缺陷相互作用的机制及其对载体运输的影响.

主要方法:

  • 使用了低温扫描道显微镜/光谱 (LT-STM/S).
  • 分析了间隔量子准粒子干扰 (QPI) 模式.
  • 量化QPI静电波的依赖能源的相位变化.

主要成果:

  • 不同的缺陷类型会产生特定的散射潜力,影响运输工具的运输.
  • 通过QPI相位分析阐明了详细的电子缺陷相互作用.
  • 在低维半导体中证明了原子级缺陷与载体运输之间的联系.

结论:

  • 在TMD中原子规模的缺陷工程是未来电子应用的关键.
  • 通过QPI了解电子缺陷相互作用为材料改进提供了洞察力.
  • 这项研究为TMD扩张提供了潜在的技术应用.