关于SnBi合金电迁移可靠性的研究概述
Wenjie Li1,2, Liwei Guo1, Dan Li1
1School of Material Science and Chemical Engineering, Harbin University of Science and Technology, Harbin 150040, China.
Materials (Basel, Switzerland)
|June 27, 2024
概括
锡- (SnBi) 接接头中的电迁移会导致集成电路的可靠性问题. 添加剂如Fe,Ni,Ag,Zn,Co,稀土元素,石墨烯纳米片,富勒烯和Al2O3可以提高接关节的可靠性.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 可靠性工程可靠性工程
背景情况:
- 集成电路面临着可靠性挑战,例如由于小型化和高电流需求的电迁移.
- 基于Sn的,包括SnBi合金,至关重要,但可能遭受电迁移引起的故障.
- SnBi提供较低的点,但需要更好的电迁移电阻,用于先进的应用.
研究的目的:
- 在Cu基板上的SnBi接接头中审查电迁移原理.
- 识别故障机制,如胡须形成,空隙,相位分离和阻力增加.
- 探索提高SnBi接接头电迁移可靠性的方法.
主要方法:
- 关于SnBi接接头中的电迁移现象的文献综述.
- 分析原子迁移引起的故障机制.
- 通过材料添加剂和微观结构修改,研究可靠性增强策略.
主要成果:
- 在SnBi接接头中的电迁移会导致空隙,裂,相位分离和电阻增加.
- 添加剂如Fe,Ni,Ag,Zn,Co,稀土元素,石墨烯纳米片 (GNS),富勒伦 (FNS) 和Al2O3可以减轻电迁移效应.
- 修改晶体方向和引入应力也可以提高接关节的可靠性.
结论:
- SnBi接接头容易受到电迁移的影响,影响集成电路的可靠性.
- 各种添加剂和微结构工程方法提供了有效的策略来提高SnBi接关节的可靠性.
- 了解和减轻电迁移对于先进电子包装的长期可用性至关重要.
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