石墨烯/铜多层结构的射频导电特性和相应机制
Chongxiao Guo1, Jian Song1, Jiamiao Ni1
1State Key Lab of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
Materials (Basel, Switzerland)
|June 27, 2024
概括
石墨烯/铜多层显示不同的无线电频率 (RF) 导电性. 铜上的单层石墨烯增强了射频导电性,而多层石墨烯由于缺陷而减少了它,与直流行为形成鲜明对比.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 电气工程 电气工程
背景情况:
- 高射频 (RF) 导电性对于先进的电子材料至关重要,以最大限度地减少电磁损失和功耗消耗.
- 石墨烯/铜 (Gr/Cu) 多层显示出有希望的直流 (DC) 导电性,超过了银.
- 微尺度射频导电性和Gr/Cu结构中的潜在机制仍未得到充分探索.
研究的目的:
- 为了评估铜-铜 (P-Cu),单层-石墨烯/铜 (S-Gr/Cu) 和多层石墨烯/铜 (M-Gr/Cu) 结构的射频导电性.
- 调查这些G / Cu系统中控制RF导电性的机制.
- 为开发用于射频应用的新型导电材料提供基础.
主要方法:
- 扫描微波阻抗显微镜 (SMIM) 用于微尺度的射频导电性评估.
- 介电共振器技术用于补充射频导电性测量.
- 使用导电性相关的德鲁德模型和散射理论进行分析.
主要成果:
- 在3 GHz的射频导电顺序:M-Gr/Cu < P-Cu < S-Gr/Cu.
- 直流电导度的顺序:P-Cu < M-Gr/Cu < S-Gr/Cu. 这就是直流电导度的顺序.
- 单层石墨烯接口表现出热效应,增强载体度;多层石墨烯缺陷增加散射,降低射频导电性.
结论:
- Gr/Cu结构的射频导电性与直流导电性显著不同.
- 单层石墨烯接口可以通过微波诱导的热效应来增强射频导电性.
- 多层石墨烯的缺陷阻碍了射频导电性,突出了材料结构的重要性.
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