研究NBTI和TID对FDSOIpMOSFET的合效应
Hao Wei1, Hongxia Liu1, Shulong Wang1
1Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China.
Micromachines
|June 27, 2024
概括
负偏差温度不稳定性 (NBTI) 可以减轻FDSOI PMOS中的辐射效应. 然而,高门电压,高温和辐射的结合显著加剧了值电压的退化.
科学领域:
- 半导体设备物理学 半导体设备物理
- 可靠性工程可靠性工程
- 电子产品中的辐射效应.
背景情况:
- 负偏差温度不稳定性 (NBTI) 和总电离剂量 (TID) 是半导体设备的关键衰老机制.
- 完全耗尽的在绝缘体 (FDSOI) PMOS晶体管在现代集成电路中被广泛使用.
- 了解NBTI和TID之间的相互作用对于预测设备寿命和性能至关重要.
研究的目的:
- 研究NBTI和TID对FDSOI PMOS的合效应.
- 分析NBTI应激的序列和组件如何影响TID诱导的降解.
- 为了评估高门电压,高温和辐射的综合影响.
主要方法:
- 使用FDSOI PMOS模型进行设备模拟.
- 在NBTI应激后模拟辐射.
- 与照射同时应用NBTI组件 (高门电压,高温).
主要成果:
- 在照射之前应用的NBTI被发现减弱了TID引起的门电压降解.
- 在NBTI应力期间的高门电压导致后续照射后更严重的值电压降解.
- 在NBTI应力期间的高温也导致了辐射后更明显的值电压降解.
- 同时的高门电压,高温和辐射导致明显更严重的门电压退化.
结论:
- NBTI应激的顺序和条件极大地影响其与TID效应的相互作用.
- 高门电压和高温加剧了FDSOI PMOS中TID诱导的门电压变化.
- 高门电压,高温和辐射的联合压力导致了大量的退化,突出了考虑合衰老机制的重要性.
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