优化基于负固定电荷的边缘终止对于垂直GaN Schottky设备的优化
Vishwajeet Maurya1,2, Daniel Alquier2, Mohammed El Amrani1,2
1CEA, Leti, Université Grenoble Alpes, 38000 Grenoble, France.
Micromachines
|June 27, 2024
概括
这项研究通过通过植入优化负固定电荷来提高化 (GaN) 肖特基二极管的分解电压 (BV). 模拟揭示了理想的电荷度,用于在垂直电源设备中提供卓越的性能.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 电气工程 电气工程
背景情况:
- 垂直化 (GaN) 肖特基二极管对于功率电子非常重要.
- 提高故障电压 (BV) 是提高设备性能和可靠性的关键.
- 边缘终止技术对于防止设备过早故障至关重要.
研究的目的:
- 为了研究由 (F) 植入引入的负定电荷对垂直GaN Schottky二极管中的BV增强的影响.
- 通过使用 TCAD 模拟来确定最大化 BV 的最佳负定电荷度.
- 提出一个经验式方程,以根据深度预测最佳固定电荷度.
主要方法:
- 使用Synopsys Sentaurus TCAD进行设备模拟.
- 为边缘终端建模一个垂直的GaN Schottky二极管,具有负固定电荷区域.
- 分析设备和与植入物相关的参数,包括来自SIMS数据的植入物概况.
主要成果:
- 通过植入的负固定电荷显著影响了BV.
- 确定了最高BV的负定电荷度的最佳范围.
- 对于盒子和现实的植入配置文件,表现出类似的BV依赖关键参数.
结论:
- 负固定电荷是一种有效的策略,用于增强垂直GaN Schottky二极管中的BV.
- 这项研究提供了一种利用植入的优化边缘终结的方法.
- 研究结果为设计高性能GaN电源设备提供了宝贵的见解.
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