SiC在过氧化溶液中的原子移除机制
Qin Man1, Qiang Sun1, Yang Wang2
1College of Engineering Science and Technology, Shanghai Ocean University, Shanghai 201306, China.
Micromachines
|June 27, 2024
概括
分子动力学模拟显示,碳化 (SiC) 的化学机械抛光 (CMP) 涉及Si-O-Si键的形成,导致SiC原子的去除. 在抛光过程中,Si-O-Si键是去除SiC材料的关键.
科学领域:
- 材料科学 材料科学 材料科学
- 表面化学 表面化学
- 计算材料科学科学 计算材料科学
背景情况:
- 碳化 (SiC) 是先进电子和航空航天领域的关键材料.
- 化学机械抛光 (CMP) 对于实现SiC元件所需的表面表面和精度至关重要.
- 了解SiC CMP的原子级机制对于过程优化至关重要.
研究的目的:
- 阐明控制碳化 (SiC) 化学机械抛光 (CMP) 的原子机制.
- 调查磨颗粒和水性H2O2溶液在SiC CMP过程中的作用.
- 在SiC抛光过程中识别主要的原子层移除机制.
主要方法:
- 使用了分子动力学 (MD) 模拟.
- 一个反应力场被用来建模原子相互作用.
- 这项研究的重点是氧化 (SiO2) 磨料颗粒在水性H2O2环境中的SiC基板上滑动.
主要成果:
- 在CMP期间观察到Si-O-Si界面桥梁键的形成.
- 这些Si-O-Si键促进Si-C键的断裂和SiC原子的去除.
- 通过破坏SiC晶格结构,发现Si原子的去除显著影响了C原子的去除.
- 确定Si-O-Si界面桥梁键是消除SiC原子的主要机制.
结论:
- 在CMP过程中去除SiC材料是一个复杂的过程,由多个原子级机制驱动.
- 形成Si-O-Si界面桥接是SiC CMP中广泛和主要的机制.
- 这项研究为增强SiC去除过程和理解CMP机制提供了新的见解.
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