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在加速降解和化下对环振荡器可靠性的深入研究,揭示集成电路的使用情况

Javier Diaz-Fortuny¹, Pablo Saraza-Canflanca¹, Erik Bury¹

¹Interuniversity Microelectronics Centre, Kapeldreef 75, 3001 Leuven, Belgium.

|June 27, 2024

概括

本研究介绍了集成电路 (IC) 的芯片内可靠性监测器,以评估因偏差温度不稳定性 (BTI) 和热载体退化 (HCD) 的实时退化. 这些监视器通过精确的回火地图提供了对IC使用历史的洞察.

科学领域:

半导体设备物理学半导体设备物理
集成电路可靠性工程集成电路可靠性工程
先进的材料科学是先进的材料科学.

背景情况:

集成电路 (IC) 在现代电子产品中至关重要,要求高可靠性和耐用性,特别是在纳米尺度技术中.
目前的方法缺乏实时芯片上监控来评估IC可靠性和预测在运行期间剩余寿命.
偏差温度不稳定性 (BTI) 和热载体降解 (HCD) 是影响IC性能的主要降解现象.

研究的目的:

开发和描述集成电路的新型芯片内可靠性监测器.
研究BTI和HCD降解和回火机制的基本物理.
为了实现实时可靠性评估,并提供对ICs的使用历史的见解.

主要方法:

在28nm多功能阵列芯片上设计和制造基于环振荡器 (RO) 的降解和回火监测器.
在加速BTI和HCD应力条件下RO监控电路的统计特征.
执行回火实验,研究压力显示器的恢复行为.

主要成果:

在应力和回火下成功统计表征基于RO的可靠性监测器.
构建精确的回火地图,详细描述监视器的温度和时间的函数.
显示器能够显示集成电路的使用历史的演示.

结论:

基于RO的监视器为实时IC可靠性评估提供了可行的解决方案.
退化地图为了解退化恢复和预测IC寿命提供了关键数据.
开发的试验车和方法允许对先进的IC技术进行全面的可靠性研究.

关键词:

老化的老化衰老的老化烧焦的烧焦方法阵列阵列阵列阵列.偏差的温度不稳定性 (BTI)热载体降解 (HCD) 是指热载体降解.集成电路集成电路集成电路环振荡器是指一个环振荡器.

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