在双接收器p型ZnO:Ag,N薄膜上长时间的电稳定性
Fernando Avelar-Muñoz1, Roberto Gómez-Rosales1, Arturo Agustín Ortiz-Hernández1,2
1Unidad Académica de Física, Universidad Autónoma de Zacatecas, Campus Universitario II, Av. Preparatoria s/n, Zacatecas 98060, Zacatecas, Mexico.
Micromachines
|June 27, 2024
概括
研究人员使用银-兴奋剂开发了稳定的p型氧化 (ZnO) 薄膜. 这些膜具有长期的电稳定性,为先进的光电子设备铺平了道路.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 半导体研究 半导体研究
背景情况:
- 在氧化 (ZnO) 中实现稳定的p型导电性对于开发先进的电子和光电子设备至关重要.
- 传统的方法往往导致不稳定或低性能的p型 ZnO.
研究的目的:
- 为了沉积和表征p型Ag-N双受体合ZnO薄膜.
- 为了研究这些片的结构性,电气性和长期稳定性.
主要方法:
- 对于薄膜沉积的直流磁铁子反应式联合喷射技术.
- 在气控制的大气中,在400°C时发火.
- 通过X射线衍射和电性能测量 (电阻,霍尔运动,孔度) 进行结构分析.
主要成果:
- 无形薄膜在回火后结晶成六边形石 ZnO 结构.
- 成功结合Ag-N双接受器,从而产生p型导电性.
- 实现了低电阻 (1-10-3 Ω·cm),霍尔移动性 (几十厘米2/V·s),以及高孔度 (10-17-10-19厘米-3).
- 证明了长期的特殊电稳定性,p型导电性保持超过36个月.
结论:
- Ag-N双受体兴奋剂是一种有效的策略,可以实现稳定的p型ZnO.
- 开发的ZnO:Ag,N薄膜显示出在短波长和透明光电子应用方面的巨大潜力.
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