相关实验视频
Updated: Jun 22, 2025

10:53
Scanning-probe Single-electron Capacitance Spectroscopy
Published on: July 30, 2013
13.0K
50GHz四端口合缩小探测卡使用Pogo引脚安置在定制金属插座中
1School of Electrical Engineering, Korea University, Seoul 02841, Republic of Korea.
Sensors (Basel, Switzerland)
|June 27, 2024
概括
一个新的金属pogo-pin探针卡设计,在多端口环境中最大限度地减少信号泄漏和合损失. 这一创新确保了高保真度的射频信号传输,用于5G电路等先进应用.
科学领域:
- 电气工程 电气工程
- 材料科学 材料科学 材料科学
- 无线电频率 (RF) 工程
背景情况:
- 在多端口射频系统中,信号完整性至关重要,因为交叉声和泄漏会降低性能.
- 传统的介电探针卡经常存在信号合问题,这限制了它们在更高频率的有效性.
- 尽量减少信号损失和最大化隔离是设计先进射频探测器解决方案的关键挑战.
研究的目的:
- 提出并验证一个金属的pogo-pin探头卡设计,旨在消除信号泄漏和合损失.
- 为了在多端口射频环境中展示与传统介电式探针卡相比更高的性能.
- 为了使集成电路可靠的高频射频信号传输.
主要方法:
- 开发了一种金属pogo-pin插座设计,在相邻的引脚之间采用金属墙结构.
- 使用拟议的设计,制造了一种原型探测卡.
- 通过测量通过线路测试和将射频信号传送到5G电路上的测量来评估性能.
主要成果:
- 金属墙有效地减少了合功率,在50 GHz下实现了2.14 dB的低损耗传输.
- 探针卡在毫米波段显示了低于-15dB的低合性能,尽管介电隔离器有轻微的泄漏.
- 射频信号被传送到一个具有低插入损失的5G电路: -0.7dB在28GHz和 -1.9dB在39GHz.
结论:
- 金属pogo-pin探针卡的设计成功地解决了多端口射频环境中的信号泄漏和合损失.
- 该原型具有出色的低损耗和高隔离特性,适合高频应用.
- 这种设计可方便多个射频信号的传输,而不会产生扭曲,为提高射频系统性能铺平了道路.
更多相关视频
08:57Hybrid Microdrive System with Recoverable Opto-Silicon Probe and Tetrode for Dual-Site High Density Recording in Freely Moving Mice
Published on: August 10, 2019
11.0K
12:18Co-localizing Kelvin Probe Force Microscopy with Other Microscopies and Spectroscopies: Selected Applications in Corrosion Characterization of Alloys
Published on: June 27, 2022
2.6K
相关概念视频
Metal-Semiconductor Junctions
332
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
332
Biasing of Metal-Semiconductor Junctions
238
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
238
Impedance Combination
431
Consider a string of christmas lights, each bulb symbolizing an impedance element. In this series configuration, the flow of electric current remains uniform across every component. This behavior aligns with Kirchhoff's Voltage Law (KVL), which asserts that the total impedance in such a setup equals the sum of individual impedances—akin to resistors in series. It follows that the voltage from the power source is distributed proportionally among these components, adhering to the...
431