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Updated: Jun 22, 2025

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Published on: November 15, 2013

对GaN-on-Si功率电子设备的审查

Yaozong Zhong¹, Jinwei Zhang², Shan Wu³

¹Key Laboratory of Nano-devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, China.

Fundamental research

|June 27, 2024

概括

化 (GaN) 在上的动力装置已经有了显著的进步. 本综述涵盖了关键的GaN表,制造挑战以及GaN-on-Si技术的未来前景.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
半导体物理半导体物理

背景情况:

基于化 (GaN) 的电力电子设备在 (Si) 基板上生长,在过去几十年中经历了大量的发展.
GaN-on-Si技术为具有成本效益,高性能功率电子产品提供了一个有前途的途径.

研究的目的:

简要介绍,回顾和展望GaN-on-Si电源设备技术的研究发展.
讨论最先进的GaN-on-Si设备技术中的关键问题,涵盖材料表层和设备制造.

主要方法:

关于GaN表的现有文献的全面审查,包括压力控制和点缺陷研究.
对设备制造技术的分析,重点是通常的解决方案,如Cascode,沟MIS-gate和p-GaN gate.
讨论 GaN 高电子移动性晶体管 (HEMT) 的设备可靠性和常见制造问题.

主要成果:

已经确定了Si上的GaN表的关键挑战,例如压力管理和缺陷控制.
已经审查了各种通常关闭的设备结构和制造策略,突出了它们的有效性.
分析了Si上的GaN HEMT的设备可靠性和常见的制造障碍.

结论:

GaN-on-Si电源设备技术已经成熟,解决了关键的材料和制造挑战.
未来的研究方向包括高频和高功率的GaN集成电路 (IC) 和垂直的GaN电源设备.

关键词:

二极管二极管是如何使用的增强模式是一种增强模式.经氧 (Epitaxy) 是一种在体内发生的.在Si上的GaN-on-Si 动力装置的动力装置是什么晶体管晶体管是一个晶体管.

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