在低兴奋剂制度下,在接口中抑制了FeSe/NdFeO3的NeMaticity和增强了FeSe/NdFeO的超导配对强度
Chihao Li1, Yuanhe Song1, Xiaoxiao Wang1
1Laboratory of Advanced Materials, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200438, China.
Nano letters
|June 27, 2024
概括
研究人员在非常低的电子兴奋剂水平下,发现铁化物 (FeSe) 对氧化铁 (NdFeO3) 的增强超导性. 这一发现促进了对低兴奋剂超导体中氧化物接口的理解.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 超导电性 超导电性 超导电性
背景情况:
- 氧化物基板上的单层铁化物 (FeSe) 的界面超导性已经引起了大量的研究关注.
- 已知氧化物接口会影响薄膜的电子特性.
研究的目的:
- 将FeSe/氧化物超导接口的研究扩展到一种新材料,即氧化铁 (NdFeO3).
- 研究FeSe/NdFeO3接口在非常低的电子兴奋剂水平下对超导性的影响.
主要方法:
- 在NdFeO3基板上制造单层FeSe薄膜.
- 在FeSe/NdFeO3异构结构的化.
- 使用对兴奋剂水平和超导差距敏感的技术 (例如,ARPES,传输测量) 进行超导性质的表征.
主要成果:
- 成功制造出具有超导性的FeSe/NdFeO3异构结构.
- 在显著低的兴奋剂水平 (0.038-0.046 e-/Fe) 上观察了接口增强的超导性.
- 与厚厚的FeSe薄膜相比,在经过良好炼的FeSe/NdFeO3中观察到更大的超导配对间隙和抑制的阴性间隙,这表明配对强度提高.
结论:
- FeSe/NdFeO3 接口有效地增强了超导,即使在极低的电子兴奋剂下也是如此.
- 氧化物接口在加强超导配对和抑制低兴奋剂体制中的内马性方面发挥着至关重要的作用.
- 这些发现为界面超导的机制和氧化物基板的作用提供了新的见解.
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