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大量的β-Ga₂O₃晶体从没有贵金属的融化中生长,通过从冷容器中拉出

A Yoshikawa^1,2,3, V Kochurikhin⁴, T Tomida⁴

¹Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Sendai, 980-8577, Japan. akira.yoshikawa.d8@tohoku.ac.jp.

Scientific reports

|June 27, 2024

概括

我们开发了一种具有成本效益的方法,用于使用冷技术大量生长氧化 (β-Ga2O3) 晶体. 这种方法避免了昂贵的,产生适合半导体应用的高纯度晶体.

科学领域:

材料科学材料科学材料科学
晶体的成长晶体的成长
半导体技术半导体技术

背景情况:

氧化 (Ga2O3) 是电力电子产品的一个有前途的材料.
传统的种植大批量Ga2O3晶体的方法通常依赖于昂贵的贵金属.
具有成本效益和可扩展的晶体生长方法对于工业采用至关重要.

研究的目的:

通过使用一种新的冷技术,报告批量β-Ga2O3晶体的成功生长.
为了证明现有的晶体生长方法的经济有效的替代方案.
为了评估种植的β-Ga2O3晶体的质量和纯度.

主要方法:

开发了氧化物晶体生长从冷 (OCCC) 方法,这是头骨融和Czochralski技术的混合体.
使用0.4-0.5 MHz的SiC MOSFET晶体管发电机 (最多35千瓦) 来进行晶体拉动.
实施了基于发电机频率调节的原始直径控制系统.

主要成果:

成功地生长了直径高达46毫米的散装β-Ga2O3晶体.
实现了X射线摇摆曲线宽度,与通过边界定义的片养生长的晶体相美.
确认高纯度,只检测到原材料杂质和低于检测限值的工艺污染.

结论:

OCCC技术为生产高纯度散装β-Ga2O3单晶基质提供了一种具有成本效益的途径.
这种方法消除了昂贵的贵金属的需求,解决了一个关键的工业挑战.
结果表明OCCC的潜力可扩展制造Ga2O3基板.

关键词:

冰冷的炉,一个冷的炉.氧化的氧化.融化的增长趋势没有贵金属的氧化物晶体生长.有氧化物半导体半导体宽带差半导体半导体宽带差半导体

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