在一项随机对照试验中,在第2周的rTMS干预的早期疗效预测了在精神分裂症24周的后续反应
Suzhen Ye1, Xiaoni Guan2, Meihong Xiu2
1Department of Rehabilitation, The First Affiliated Hospital of Wenzhou Medical University, Wenzhou, China.
概括
在精神分裂症患者中,重复性横磁性刺激 (rTMS) 对即时记忆有延迟的益处. 记忆力在第2周的早期改善预测了长期的疗效,这表明rTMS是治疗认知缺陷的可行治疗方法.
科学领域:
- 神经科学是一个神经科学.
- 精神病学是一个精神病学.
- 神经调节是一种神经调节.
背景情况:
- 重复性横磁刺激 (rTMS) 是一种非侵入性脑刺激技术,用于调节皮质活动并增强神经可塑性.
- 以前对rTMS用于精神分裂症 (SZ) 认知缺陷的研究已经产生了不一致的结果.
研究的目的:
- 研究rTMS应用于左背侧前额皮层 (l-DLPFC) 的疗效,以改善SZ患者的认知缺陷.
- 为了确定早期治疗反应是否预测长期疗效.
主要方法:
- 认知功能在基线和第2,6,24周使用可重复电池评估神经心理状态 (RBANS) 尺度进行评估.
- 患者接受了10赫兹rTMS,20赫兹rTMS或假刺激.
主要成果:
- 对于即时记忆和RBANS总分,观察到时间和干预之间的显著相互作用,表明10Hz和20HzrTMS的延迟有益作用.
- 与假装相比,20赫兹rTMS在第6周显著改善了即时记忆 (p=0.029).
- 在第2周即时记忆的改善与第24周的改善正相关 (β=0.461,p=0.002).
结论:
- 活跃的rTMS表明对精神分裂症患者的认知缺陷有有益影响.
- 在第二周的早期治疗疗效可以预测在24周的随访期间的持续疗效.
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