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单元和双元金属门无连接晶体管的线性和互调扭曲分析

Bhaskar Awadhiya¹, Rahul Ratnakumar¹, Sampath Kumar¹

¹Department of Electronics and Communication Engineering, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal, Udupi, Karnataka, 576104, India.

|July 1, 2024

概括

与双金属门 (DMG) JLTs相比,单金属门 (SMG) 无连接晶体管 (JLTs) 显示出更高的线性性和更低的互调扭曲. 这使得SMG JLTs非常适合需要高性能的先进RFIC应用.

科学领域:

电气工程电气工程
半导体设备物理半导体设备物理

背景情况:

线性和间调扭曲是射频集成电路 (RFIC) 中的关键性能指标.
无连接晶体管 (JLT) 在设备扩展和制造简单性方面提供了潜在的优势.
对不同门结构的比较分析对于优化射频性能至关重要.

研究的目的:

进行对单金属门 (SMG) 和双金属门 (DMG) JLTs之间的线性和互调扭曲的详细比较分析.
调查温度,门长和门材料对SMG和DMGJLT线性的影响.
确定最佳的JLT设计,以提高射频线性.

主要方法:

使用 TCAD (计算机辅助设计技术) Silvaco套件进行设备模拟.
通过使用关键绩效指标评估线性:VIP2,VIP3,IIP3,P1dB,IMD3,gm1,gm2和gm3.
在不同的温度条件,门长度和门材料下进行模拟.

主要成果:

与DMG JLTs相比,SMG JLTs的电压拦截点 (VIP2,VIP3) 和第三阶段拦截功率 (IIP3) 显著更高.
在SMG JLTs中,1dB压缩点 (P1dB) 发现更高.
对于SMG JLTs,观察到下第三顺序传导率 (gm3) 和第三顺序间调扭曲 (IMD3) 值,这表明它们具有优越的线性.

结论:

与DMG JLTs相比,SMG JLTs表现出更高的线性和更低的互调扭曲.
对于要求高线性和最小扭曲的RFIC应用,SMG JLTs是一个有前途的候选者.
设备设计选择,包括门结构和材料,显著影响射频性能.

关键词:

交叉路口减去晶体管 (JLT)无线电频率集成电路 (RFIC) 是一种下值斜率 (SS) 是指下值的斜率 (SS) 是指下值的斜率 (SS) 是指下值的斜率.技术计算机辅助设计 (TCAD)

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