阿托祖尔基于化的六角基记忆器,用于高性能神经形态计算
Jiye Kim1, Jaesub Song1, Hyunjoung Kwak1
1Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea.
Small (Weinheim an der Bergstrasse, Germany)
|July 1, 2024
概括
六角化记忆器实现了与人工神经网络相同的能量水平. 这些设备提供高可靠性和快速切换,模仿下一代计算的生物突触.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
- 计算机工程 计算机工程
背景情况:
- 下一代神经形态计算需要节能和可靠的memristors.
- 当前的memristors很难与生物突触的低能耗相匹配.
研究的目的:
- 开发用于人工神经网络的六边形化 (h-BN) 的在tojoule级的能耗memristors.
- 提高用于神经形态应用的记忆器件的可靠性和性能.
主要方法:
- 制造基于六角化 (h-BN) 的金属绝缘体半导体 (MIS) 记忆器.
- 通过金属有机化学蒸汽沉积 (MOCVD) 在高度杂的Si.上,晶圆尺度均的h-BN生长.
- 电气和纳米结构分析以阐明开关机制.
主要成果:
- 在基于h-BN的MIS记忆器中证明了在tojoule级的能耗.
- 由于均的h-BN层,实现了卓越的可靠性和低变性.
- 观测到纳秒级切换速度和多电阻状态,这些状态是由原子尺寸的线丝和SiOx层实现的.
结论:
- 基于h-BN的MIS记忆器为克服神经形态设备中的能量限制提供了一条途径.
- 这些记忆器有效地弥合了人造和生物突触之间的差距.
- 开发的技术非常适合用于高性能人工神经网络.
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