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Updated: Jun 22, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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高性能2D两极式MoTe2侧向记忆器通过轻度氧化

Bochen Zhao1, Longlong Xu1, Ruixuan Peng1

  • 1State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China.

Small (Weinheim an der Bergstrasse, Germany)
|July 3, 2024
PubMed
概括

温和的氧化增强了二维过渡金属二甲基化物 (TMDC) 的记忆性能. 这一策略提高了电阻切换比率,并使得在受大脑启发的计算中实现了先进的人工突触应用.

关键词:
两极半导体半导体的两极半导体侧面的记忆器甲化是一种化.氧化过程中的氧化.电阻开关 电阻开关

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MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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