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研究Cr替代的ZnSe半导体的结构和光电子特性
Muhammad Aamir Iqbal1, Sunila Bakhsh2, Siti Sarah Maidin3
1School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China. aamir.hum@gmail.com.
Scientific reports
|July 5, 2024
概括
将 (Cr) 添加到化 (ZnSe) 半导体中,会改变其结构和光学特性. 这为光电子应用创造了可调节的电子带隙和增强的光吸收.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 固态化学 固态化学
背景情况:
- 化 (ZnSe) 是一种具有直接带隙特性的半导体.
- 了解兴奋剂对ZnSe光电子特性的影响对于先进的材料设计至关重要.
研究的目的:
- 为了研究添加化化 (Zn1-xCrxSe) 半导体的光电子和结构特性.
- 探索不同度对电子带结构和光学吸收的影响.
主要方法:
- 使用密度函数理论 (DFT) 的计算.
- 利用修改后的贝克-约翰逊 (mBJ) 潜力进行准确的电子结构预测.
主要成果:
- 格子常数下降,而随着Cr.度的上升,散装模量增加.
- 从直接到间接的电子带隙的过渡观察到Cr的加入,将带隙从2.769减少到0.216 eV.
- 在ZnCrSe.Se中观察到增强的红外吸收和更广泛的可见光吸收 (红色到蓝色).
结论:
- 兴奋剂显著改变了ZnSe的结构和电子特性,导致可调节的光学特性.
- CrSe半导体由于其光学吸收频谱的变化,在光子和光电子设备中具有各种应用的潜力.
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