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通过Codoping实现的高性能氧化薄膜晶体管及其在逻辑电路中的应用

Tao Zhang¹, Ya-Fen Wei¹, Chen-Shuo Zhang¹

¹Micro&Nano Semiconductor Research Center of Jimei University, School of Ocean Information Engineering, Jimei University, Xiamen 361021, China.

ACS applied materials & interfaces

|July 7, 2024

概括

与和配合锡氧化物 (SnO2) 改善了薄膜晶体管 (TFT). 这一策略提高了电气性能和稳定性,使高性能电子设备成为可能.

科学领域:

材料科学材料科学材料科学
半导体物理半导体物理
纳米技术纳米技术

背景情况:

锡氧化物 (SnO2) 是一种低成本,环保的半导体,具有宽带间隙,适用于通道材料.
大量SnO2具有很高的电子流动性,但SnO2薄膜晶体管 (TFT) 的性能适度,限制了应用.
现有的SnO2 TFT在实现高电性能和运行稳定性方面面临着挑战.

研究的目的:

通过配合策略,提高SnO2 TFT的电特性和稳定性.
调查 codoping 含量对 SnO2 TFT 的性能的影响.
在实用的电子电路中展示 codoped SnO2 TFT 的潜力.

主要方法:

使用 (In) 和 (Ga) 的代策略被用来修改SnO2网格.
对化和未化SnO2薄膜及其相应的TFT进行比较分析.
研究不同度的codopant对设备特征的影响.

主要成果:

通过利用离子半径的差异,Codoping有效地减少了杂质引起的应变.
最佳的编码 SnO2 (TIGO) TFT 实现了 15.9 cm2/V·s 的场效应移动性,0.2 V 的门电压,以及 2.2 × 107.7 的开关电流比.
TIGO TFT在偏差应力下表现出极好的稳定性,具有小的门电压转移,并用于构建高增益 (10.76) 单极逆变器.

结论:

使用In和Ga编码SnO2是一种有效的策略,可以克服SnO2 TFT的性能限制.
优化的TIGO TFT显示器表现出卓越的电气性能和稳定性,适用于先进的电子应用.
这项研究验证了SnO2在下一代电子设备中的潜力.

关键词:

高流动性的高流动性.印和二氧化的氧化.变频器变频器变频器变频器阳光凝是一种 Sol-gel.薄膜晶体管是一种薄膜晶体管.

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