的共同污染:板和老化
Jintao Wang1,2, Dingning Ke1, Feng Tian2,3
1Education Center of Experiments and Innovations, Harbin Institute of Technology (Shenzhen), 518055, China.
Heliyon
|July 8, 2024
概括
酸 (CoSi) 层有效地阻断了的扩散到中,从而消除了在10纳米技术中需要屏障层的需求. 这一发现对于先进的半导体互连至关重要.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 纳米技术纳米技术
背景情况:
- 是10纳米互连的有希望的材料,为铜提供了替代品.
- 了解在中的扩散对于其在半导体设备中的应用至关重要.
研究的目的:
- 为了调查中的原子污染.
- 为了确定氧化层的扩散屏障特性.
主要方法:
- 传输电子显微镜 (TEM) 用于界面分析.
- 第一个原则计算模型原子相互作用和扩散.
主要成果:
- 在/接口上形成了一层密集的几纳米化 (CoSi) 层.
- CoSi 层作为原子的有效扩散屏障.
- 由于CoSi层的半导体性质和接口效应,扩散到中受到阻碍.
结论:
- 形成一个CoSi层可以防止扩散到中.
- 在沉积金属在芯片上时,不需要额外的屏障层.
- 是先进的半导体技术中局部互连层的可行材料.
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