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无形氧化物基交叉压抑太阳盲成像阵列由一步方法准备.

Hanzhe Zhang1,2, Rui Zhu2,3, Zengxia Mei2,3

  • 1Institute of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P.R. China.

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概括

研究人员开发了一种简单,具有成本效益的无形氧化物 (a-Ga2O3) 成像阵列,用于太阳盲紫外线检测. 这种新的方法同时沉积了检测和阻断交叉通话的元素,从而实现了实际应用.

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科学领域:

  • 材料科学 材料科学 材料科学
  • 光电学是指光电子产品.
  • 半导体设备 半导体设备

背景情况:

  • 太阳盲紫外线 (UV) 检测提供了由于大气光传输限制的低噪音成像机会.
  • 太阳盲图像传感器对物体大小,形状和位置确定越来越感兴趣.
  • 开发有效的太阳盲紫外线成像阵列是具有挑战性的,因为跨条架构中复杂的交叉声阻碍.

研究的目的:

  • 开发一种简单且具有成本效益的方法,用于制造适用的太阳盲紫外线成像阵列.
  • 为了在基于氧化的成像阵列中证明有效的交叉干扰抑制.
  • 促进基于氧化的太阳盲紫外线探测器的实际应用.

主要方法:

  • 制造基于无形氧化物 (a-Ga2O3) 的二极管,其整流器比率高 (10^6).
  • 一步沉积方法,在成像阵列中同时创建检测和交叉声阻碍元件.
  • 构建和测试2x2横杆阵列以验证交叉干扰的抑制.

主要成果:

  • 在a-Ga2O3二极管中实现了10^6的高整流器比率.
  • 通过简化的一步沉积过程成功准备了一个太阳盲成像阵列.
  • 在2x2交叉杆阵列内证明有效的交叉声阻碍.

结论:

  • 已经提出了一种简单,具有成本效益的方法,用于准备可用的太阳盲成像阵列,具有交叉干扰抑制.
  • 开发的基于a-Ga2O3的成像阵列显示了实际太阳盲紫外线检测的希望.
  • 这项工作促进了基于Ga2O3的太阳盲紫外线探测器技术的进步.