Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

MOS Capacitor01:25

MOS Capacitor

759
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
759
Design Example: Frog Muscle Response01:14

Design Example: Frog Muscle Response

232
A student is tasked to work on an intriguing experiment involving an RL (Resistor-Inductor) circuit to study the muscle response of a frog's leg to electrical stimulation. The RL circuit plays a crucial role in this experiment, providing the means to control and measure the electrical impulses that trigger muscle contraction.
When the switch connecting the RL circuit is closed, a brief muscle contraction is observed. This is because, at a steady state, the inductor acts like a short...
232
Resting Membrane Potential01:24

Resting Membrane Potential

18.5K
The relative difference in electrical charge, or voltage, between the inside and the outside of a cell membrane, is called the membrane potential. It is generated by differences in permeability of the membrane to various ions and the concentrations of these ions across the membrane.
The Inside of a Neuron is More Negative
The membrane potential of a cell can be measured by inserting a microelectrode into a cell and comparing the charge to a reference electrode in the extracellular fluid. The...
18.5K
Non-ohmic Devices00:51

Non-ohmic Devices

1.1K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.1K
The Resting Membrane Potential01:21

The Resting Membrane Potential

131.7K
Overview
131.7K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

320
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
320

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Co-polymerized CMY colored polyurethane latex with high color strength and fastness for inkjet printing.

RSC advances·2026
Same author

Computing-in-memory architecture for Kolmogorov-Arnold networks based on tunable Gaussian-like memory cells.

Nature communications·2026
Same author

Intrinsic Negative Magnetoresistance and Broadband Photoresponse in Magnetic van der Waals Crystal TaFeTe<sub>2</sub>.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same author

Determining the Dipole Orientation of Second Harmonic Generation in 3R-MoS<sub>2</sub> for Enhanced Nonlinear Susceptibility.

ACS nano·2025
Same author

Resolving Spin Orientation in the van der Waals Antiferromagnet CrCl<sub>3</sub> via the Exciton-Enhanced Magneto-Optical Voigt Effect.

ACS nano·2025
Same author

Sub-2-nm-droplet-driven growth of amorphous metal chalcogenides approaching the single-layer limit.

Nature materials·2025

相关实验视频

Updated: Jun 21, 2025

A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

8.9K

动态memristor用于物理水库计算计算.

Qi-Rui Zhang1,2, Wei-Lun Ouyang2, Xue-Mei Wang2

  • 1Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China. fucailiu@uestc.edu.cn.

Nanoscale
|July 10, 2024
PubMed
概括

记忆器设备使时间信号处理的高效物理储存计算 (PRC) 成为可能. 这篇评论探讨了基于memristor的PRC,详细介绍了设备机制,可调节的动态以及未来的研究途径.

更多相关视频

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.8K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.1K

相关实验视频

Last Updated: Jun 21, 2025

A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

8.9K
Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.8K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.1K

科学领域:

  • 神经科学和神经形态工程 神经科学和神经形态工程
  • 材料科学和设备物理学 材料科学和设备物理学

背景情况:

  • 储计算 (RC) 提供高效的时间信号处理,培训成本低.
  • RC系统利用非线性动力学将输入映射到高维空间进行分类.
  • 由于其复杂的动态,memristors对物理水库计算 (PRC) 的实现具有前景.

研究的目的:

  • 审查基于memristors的物理储库计算 (PRC) 系统.
  • 解释PRC的电阻开关机制和memristor设备的可调节动力学.
  • 突出基于memristor的PRC的发展,挑战和未来方向.

主要方法:

  • 对memristor电阻开关机制的设备级分析.
  • 记忆器动态行为及其可调性的表征.
  • 对基于memristor的储计算架构现有文献的审查.

主要成果:

  • 记忆器表现出复杂的动态,适合在RC中进行非线性映射.
  • 可调节的memristor特性允许优化PRC性能.
  • 基于memristor的PRC显示了有效的时间数据处理的潜力.

结论:

  • 基于memristor的PRC是先进信号处理的可行方法.
  • 需要进一步的研究来克服当前的挑战,并释放充分的潜力.
  • 未来的工作应该专注于设备优化和系统集成,以提高计算能力.