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完全打印的多层陶电容器基于高k矿纳米板
Pengxiang Zhang1, Feng Dang2, Xin Zhang3
1State Key Laboratory of Silicate Materials for Architectures, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, China.
Small (Weinheim an der Bergstrasse, Germany)
|July 11, 2024
概括
喷墨打印使多层矿纳米板微电容器能够提高性能. 优化的结构在各种基板上实现了高电容密度和介电常数,展示了先进能量存储设备的潜力.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
- 电气工程 电气工程
背景情况:
- 化学剥离的矿纳米板为高性能微电容器提供了潜力.
- 多层结构理论上可以在不增加设备尺寸的情况下增强电容.
- 在喷墨打印的异质连接中,层间的透限制了性能.
研究的目的:
- 开发喷墨印刷的多层矿纳米板微电容器.
- 优化多层配置以提高介电性能.
- 调查2D材料电容的增材制造潜力.
主要方法:
- Ag/(Ca2NaNb4O13/Ag) n和石墨烯/(Ca2NaNb4O13/石墨烯) n多层结构 (n=1-3) 的喷墨印刷.
- 优化油墨配方,打印参数和热处理.
- 在刚性和柔性基板上使用矿纳米板,石墨烯纳米板和银制造.
主要成果:
- 在各种基板上成功打印多层配置的喷墨印刷.
- 优化介电性能通过调层数和电极/介电接口.
- 石墨烯/(Ca2NaNb4O13/石墨烯) 3电容器实现了346 ± 12 nF cm−2电容密度和193 ± 18介电常数.
- 证明了适度的绝缘,灵活性,热稳定性和化学敏感性.
结论:
- 通过喷墨打印的多层结构设计对于高性能2D材料基陶电容器是有效的.
- 优化的矿/石墨烯多层结构显示了储能应用的巨大潜力.
- 这种方法为高级微电容器的增材制造提供了途径.
相关概念视频
01:26Spherical and Cylindrical Capacitor
A spherical capacitor consists of two concentric conducting spherical shells of radii R1 (inner shell) and R2 (outer shell). The shells have equal and opposite charges of +Q and −Q, respectively. For an isolated conducting spherical capacitor, the radius of the outer shell can be considered to be infinite.
Conventionally, considering the symmetry, the electric field between the concentric shells of a spherical capacitor is directed radially outward. The magnitude of the field, calculated by...
Conventionally, considering the symmetry, the electric field between the concentric shells of a spherical capacitor is directed radially outward. The magnitude of the field, calculated by...
01:18Capacitor With A Dielectric
Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
01:20Design Example: Capacitance Multiplier Circuit
In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
01:25MOS Capacitor
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...