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在碳和化纳米管内封装晶体和无形Sb₂S₃

Griffin M Milligan¹, Dmitri Leo Mesoza Cordova¹, Ze-Fan Yao²

¹Department of Chemistry, University of California Irvine Irvine California 92697 USA marguill@uci.edu.

Chemical science

|July 12, 2024

概括

研究人员在碳纳米管中合成了单个三硫化物 (Sb₂S₃) 链,通过纳米管直径和缺陷控制晶体的生长. 这使得新的纳米级光电子设备成为可能.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
凝聚物质物理学凝聚物质物理学

背景情况:

准-1D (q-1D) 范德瓦尔斯 (vdW) 晶体具有独特的电子和光学特性.
抗三硫化物 (Sb₂S₃) 由于其异构结构和可见光光电子产品,对光伏和相变装置有希望.
控制的合成亚纳米厚的q-1D Sb₂S₃结构至关重要,但具有挑战性.

研究的目的:

研究纳米管封装对Sb₂S₃纳米结构生长和阶段的影响.
开发合成Sb₂S₃的单一共价链的方法.
探索Sb₂S₃-纳米管异构结构的光电子特性.

主要方法:

在不同直径的单壁碳纳米管 (SWCNTs) 和化纳米管 (BNNTs) 中封装Sb₂S₃.
使用电子显微镜和晶体分析对Sb₂S₃纳米结构进行表征.
制造和测试用于光电流的Sb₂S₃@BNNT异构结构.

主要成果:

小直径的纳米管在[010]方向上促进了Sb₂S₃结晶,使得在2 nm以下的SWCNT中可以访问少数到单一的共价链.
在Sb₂S₃-纳米管接口上的缺陷和不连续性影响了晶体秩序,导致大纳米管中缺陷周围的无形Sb₂S₃域.
在BNNT中超细无形Sb₂S₃产生了pA范围内的光电流,促进了几纳米宽的光电阻的制造.

结论:

纳米管封闭是一种可行的策略,可以控制q-1D vdW pnictogen chalcogenides如Sb₂S₃的结晶动态和形态.
在纳米管接口上的缺陷工程为操纵Sb₂S₃纳米结构结晶提供了一条途径.
Sb₂S₃@BNNT异构结构显示出制造新型超窄光电子设备的潜力.

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