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用THz光学霍尔效应探测的III组化物半导体和设备结构的电子特性

Nerijus Armakavicius^1,2, Philipp Kühne^1,2, Alexis Papamichail^1,2

¹Center for III-Nitride Technology (C3NiT-Janzén), Linköping University, 581 83 Linköping, Sweden.

Materials (Basel, Switzerland)

|July 13, 2024

概括

太赫兹光学霍尔效应 (THz OHE) 是一种无接触方法,用于研究III组化物中的电荷载体特性. 这种技术有助于对电子和照明应用中的材料的理解.

科学领域:

材料科学材料科学材料科学
固态物理固态物理
光电学是指光电子产品.

背景情况:

第三组化物对于固态照明和先进电子设备至关重要.
了解电荷载体行为是解锁新应用程序和提高设备性能的关键.
对于这些材料的详细分析,需要新的表征技术.

研究的目的:

探索太赫兹光学霍尔效应 (THz OHE) 的应用,以表征III组化物材料和设备.
研究异构结构和散装材料中的电荷载体特性.
为了证明THz OHE在理解电子应用的材料特性方面的能力.

主要方法:

使用了无接触的太赫兹光学霍尔效应 (THz OHE) 光谱.
在磁场下使用长波长的光谱圆测量.
在多层和散装III组化物中分析了电荷载体密度,信号,流动性和有效质量.

主要成果:

在分级的AlGaN通道高电子移动性晶体管 (HEMT) 结构中特征了二维电子气体 (2DEG) 特性.
在N极的GaN/AlGaN HEMT中揭示了异性流动性,与表面形态有关.
介绍了依赖温度的电荷载体特性,重点是GaN的有效质量.

结论:

THz OHE是一种强大的,非破坏性的工具,用于对III组化物中载荷载体运输的定量分析.
该技术为高功率和高频电子相关的材料特性提供了关键的见解.
THz OHE促进了III组化物材料和设备开发的进步.

关键词:

这里是HEMT.和的化化.化的化是一种化.电气性能电气性能电气性能免费运输公司免费运输公司的化是的化物.第三组化物.高电子移动性晶体管高电子移动性的晶体管.光学霍尔效应霍尔效应太赫兹 (Terahertz) 是一个频率.

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