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Updated: Jun 14, 2026

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通过分子吸附在C4N3单层上设计有机自旋无半导体

Dongqiu Zhao1, Xiao Tang2, Wanyan Xing1

  • 1School of Physics and Electric Engineering, Anyang Normal University, Anyang 455000, China.

Molecules (Basel, Switzerland)
|July 13, 2024
PubMed
概括

研究人员发现了一种新的无旋隙半导体 (SGS) 材料,Pca21 C4N3,它对旋电学具有有前途的特性. 吸附CO分子增强了其SGS特性,为先进的电子应用铺平了道路.

关键词:
C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C4N3C密度函数理论计算 密度函数理论计算没有旋转间隙的半导体半导体旋转电子技术 (spintronics) 是一个技术.

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