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基于聚烯 (p-烯乙烯) 的高性能一维亚-5纳米晶体管分子电线

Zhilin Chen¹, Xingyi Tan¹, Qiang Li²

¹Department of Physics, Chongqing Three Gorges University, Wanzhou 404100, China.

Molecules (Basel, Switzerland)

|July 13, 2024

概括

这项研究探讨了门全方位场效应晶体管 (FET) 中的聚乙乙烯 (PPE) 分子线. 优化的设计达到2028年的性能目标,显示了超越摩尔定律的半导体技术进步的潜力.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
纳米技术纳米技术

背景情况:

聚乙烯 (PPE) 是一维的分子电线,具有独特的电子特性.
场效应晶体管 (FET) 是关键的电子设备,其效率是一个关键的研究领域.
国际设备和系统路线图 (IRDS) 制定了电子设备的未来性能基准.

研究的目的:

通过使用第一原则量子运输来研究PPE分子电线FET的效率极限.
根据未来 (2028年) 的IRDS要求,评估GATE-all-around (GAA) PPE分子电线FET的性能.
探索这些设备降低摩尔定律的潜力.

主要方法:

使用第一原则的量子运输模拟.
分析门长度 (L) 和底层 (UL) 对FET性能的影响.
将模拟设备指标 (当前状态,功率延迟产物,延迟) 与2028年的IRDS 2022基准进行比较.

主要成果:

优化的n型GAA PPE分子线FET (L=5nm,UL=1-3nm) 满足了2028年电流,功率和延迟的高性能 (HP) 目标.
优化的p型GAA PPE分子线FET (L=5,3nm,UL=1-3nm) 也达到2028HP的目标.
特定配置的p型FET满足2028年低功耗 (LP) 目标的电流和延迟.
演示了第一个1D碳基双极FET.

结论:

GAA PPE分子电线FET显示出实现2028年IRDS设定的性能目标的希望.
这些设备代表了将摩尔定律扩展到3纳米的潜在途径.
基于1D碳的双极FET的开发为分子电子学开辟了新的途径.

关键词:

密度函数理论密度函数理论量子运输模拟量子运输模拟下-5 nm 门的长度.晶体管是一个晶体管.

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