关于中红外脉冲激光对电荷合装置 (CCD) 和HgCgTe探测器损伤效应的实验研究
Yang Liu1, Feng Zhou2, Yunzhe Wang1,3
1Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.
Sensors (Basel, Switzerland)
|July 13, 2024
概括
带外的中红外脉冲激光可以损坏电荷合装置 (CCD) 和HgCdTe探测器. 确定的主要损伤机制是热,影响了电光成像系统的性能.
科学领域:
- 电光成像系统 电光成像系统
- 激光诱导的损伤机制 激光诱导的损伤机制
- 光电探测器技术的技术.
背景情况:
- 光探测器是电光系统中的关键组件.
- 激光损伤对光电探测器的功能构成重大威胁.
- 了解损坏机制对于系统可靠性至关重要.
研究的目的:
- 研究带外激光器引起的光电探测器损伤机制.
- 为了确定特定检测器类型的中红外脉冲激光器的损伤值.
- 为激光保护和性能优化提供见解.
主要方法:
- 激光诱导损伤的实验研究.
- 使用中红外脉冲激光器确定损伤值.
- 对CCD和HgCdTe探测器的损坏现象和数据的分析.
主要成果:
- 发现带外的中红外脉冲激光使CCD和HgCdTe检测器失效.
- 这些探测器的损坏值经过实验确定.
- 主要损伤机制被确定为热.
结论:
- 中红外脉冲激光器对光检测器的完整性构成重大威胁.
- 热效应是CCD和HgCdTe探测器损坏的主要原因.
- 这些发现为激光保护策略和成像系统增强提供了参考.
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