在正方形网铁磁铁中巨大的室温拓学霍尔效应LaMn2Ge2
Subhajit Roychowdhury1,2, Premakumar Yanda1, Kartik Samanta1
1Max Planck Institute for Chemical Physics of Solids, 01187, Dresden, Germany.
Advanced materials (Deerfield Beach, Fla.)
|July 15, 2024
概括
拓磁性材料LaMn2Ge2在室温下表现出一个巨大的拓霍尔效应. 这一发现为螺旋电子应用提供了有前途的潜力,克服了以前的温度限制.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 这就是Spintronics.
背景情况:
- 拓磁性材料表现出独特的现象,如异常纳斯特效应 (ANE),异常霍尔效应 (AHE) 和拓霍尔效应 (THE).
- 这些效应通常在低温下观察到,限制了实际应用.
- LaMn2Ge2是一种非线性铁磁体,其 Curie 温度高 (≈325 K),这表明室温拓现象的潜力.
研究的目的:
- 为了研究铁磁材料LaMn2Ge2在室温下的拓传输特性.
- 探索LaMn2Ge2的潜力,用于自旋电子应用.
主要方法:
- 单晶中子衍射被用来确定磁体结构.
- 测量拓的霍尔电阻在室温和不同的磁场角度进行.
主要成果:
- 在室温下 (场角75°) 观察到一个巨大的拓霍尔电阻 (≈4.5μΩ cm).
- 这一值明显超过了其他具有非 coplanar 旋转结构的材料.
- 中子衍射证实了不相称的圆形磁结构作为基本状态.
结论:
- 观察到的大型拓霍尔效应归因于来自非 coplanar 旋转配置的增强的旋转奇拉性.
- LaMn2Ge2显示出作为用于自旋电子设备的室温拓半金属的显著前景.
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