相关实验视频

Updated: May 7, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

13.8K

弱光暗场STEM的应用,用于脱位环分析†

Yan-Ru Lin1, Yao Li2,3, Steven J Zinkle1,2

  • 1Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.

Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada
|July 15, 2024
PubMed
概括

弱光暗场扫描传输电子显微镜 (STEM) 提供了对材料中辐射诱导的脱位环的卓越成像. 这种先进的技术比核应用的传统方法提供了更清晰,更详细的缺陷分析.

关键词:
这是一个声音.这就是TEMEM.这是一种失调,失调的失调.脱位环节的脱位环节辐射引起的缺陷.弱光束黑暗场的弱光束.

更多相关视频

Sample Preparation and Experimental Design for In Situ Multi-Beam Transmission Electron Microscopy Irradiation Experiments08:31

Sample Preparation and Experimental Design for In Situ Multi-Beam Transmission Electron Microscopy Irradiation Experiments

Published on: June 27, 2022

1.7K
Visualization of Organelles In Situ by Cryo-STEM Tomography08:37

Visualization of Organelles In Situ by Cryo-STEM Tomography

Published on: June 23, 2023

2.0K

相关概念视频

Three-Dimensional Analysis of Strain01:29

Three-Dimensional Analysis of Strain

Three-dimensional strain analysis is crucial for understanding how materials deform under stress, particularly in elastic, homogeneous materials. This method employs principal stress axes to simplify complex stress states into more understandable forms. Subjected to stress, a small cubic element within a material either expands or contracts along these axes, transforming into a rectangular parallelepiped. This transformation effectively illustrates the material's deformation. The principal...