宽带和制造耐受性3dB合器具有拓谷边模式
Guo-Jing Tang1, Xiao-Dong Chen1, Lu Sun2
1School of Physics & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China.
Light, science & applications
|July 15, 2024
概括
拓物理学使光子集成电路能够使用强大的3dB合器. 这些新型设备提供了宽带和对制造错误的不敏感性,增强了芯片上的应用程序.
科学领域:
- 纳米光子学 纳米光子学
- 拓物理 拓物理
- 集成光学 集成光学 集成光学
背景情况:
- 3dB合器对于光子集成电路 (PIC) 至关重要,但其带宽和制造灵敏度有限.
- 现有的设计在现实应用中难以保持性能的一致性.
研究的目的:
- 在纳米光子学中引入拓物理来设计强大的3dB合器.
- 开发一个对具有增强性能特性的拓式3dB合器的框架.
- 探索拓学原理在芯片上光学设备中的应用.
主要方法:
- 在光子晶片结构中利用山谷-霍尔拓和镜像对称性.
- 设计和模拟拓式3dB合器.
- 对制造错误和带宽进行容忍分析.
主要成果:
- 通过波长不敏感的散射矩阵实现了理想的3dB分裂.
- 证明了48 nm的广泛工作带宽.
- 证实了对20纳米的维度错误的强度.
- 提出了一种拓干扰仪,用于在芯片上进行强大的距离测量.
结论:
- 拓物理提供了一种强大的方法来克服传统光子合器的局限性.
- 开发的拓式3dB合器和干扰仪显示出强大的PIC的巨大潜力.
- 这项工作为先进的应用铺平了道路,如波长分割复杂化和光学连贯性断层扫描.
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