电刺激为更明亮的持久发光
Xilin Ma1, Yuhua Wang2, Takatoshi Seto3
1Key Laboratory for Special Function Materials and Structural Design of the Ministry of Education, National & Local Joint Engineering Laboratory for Optical Conversion Materials and Technology of National Development and Reform Commission, Department of Materials Science, School of Materials and Energy, Lanzhou University, No. 222, South Tianshui Road, Lanzhou, Gansu, 730000, China.
Light, science & applications
|July 15, 2024
概括
一种新的电场刺激技术增强了材料中的持久发光 (PersL) 亮度. 这种方法利用电子转移来提高后照强度,为PersL机制提供了新的见解.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 光物理学的光学物理学
背景情况:
- 了解持久发光 (PersL) 机制对于开发更明亮的持久发光材料 (PersLMs) 至关重要.
- 当前知识的局限性阻碍了先进的PersLMs的设计.
研究的目的:
- 为了研究外部电场对SrAl2O4:Eu2+,Dy3+的持续发光特性的影响.
- 为了阐明后照亮亮度观察到的增强背后的机制.
主要方法:
- 在SrAl2O4:Eu2+,Dy3+电极结构上的直流电场测量.
- 在不同电压下分析光发光 (PL) 和后发光特性.
- 热发光 (TL) 光谱法用于研究被困的电荷载体.
- 速率方程建模以说明电子转移动态.
主要成果:
- 观察到一种名为"外部电场刺激后光初始亮度增强"的新奇现象.
- 施加的电压显著增加了PersL强度.
- 被困在超浅陷 (0.022 eV) 中的电子被证明通过传导带转移.
- 余光强度在6V时达到0.538cd·m−2.
结论:
- 一种电场刺激技术有效地提高了材料中的PersL强度.
- 这项研究为PersLMs的基本机制提供了新的视角.
- 这种方法为设计和优化未来的PersLMs开辟了道路.
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