Bi4O4SeCl2

Wenyan Jiao1, Shihao Han1, Hongmei Yuan1

  • 1Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China.

概括

这项研究预测了范德瓦尔斯半导体Bi4O4SeCl2的高热电性能. 优化的p型材料的ZT值为3.1,对于高效的能量转换设备来说是有前途的.