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Updated: Jun 21, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Published on: July 24, 2015

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一种基于化的温德瓦尔斯超晶格异构结构材料的简单且可扩展的制造方法,用于高度稳定的超级电容器电极应用

Ok-Kyung Park1, Nam Hoon Kim1, Joong Hee Lee1,2

  • 1Department of Nano Convergence Engineering, Jeonbuk National University, Jeonju, Jeonbuk, 54896, Republic of Korea. jhl@jbnu.ac.kr.

Nanoscale
|July 16, 2024
PubMed
概括

研究人员为石墨烯/六角化 (G/BN) 超级电容器开发了一种可扩展的方法. 这种新的G/Fe/BN(NS) 电极材料显著提高了先进的可再生能源解决方案的能量储存和稳定性.

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相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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