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Updated: Jul 25, 2026

Analysis of Contact Interfaces for Single GaN Nanowire Devices
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Published on: November 15, 2013

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提高了InGaN倾斜纳米线阵列的光辐射性能

Zhihao Cao1, Lei Liu1, Jian Tian1

  • 1Department of Optoelectronic Technology, School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.

ACS applied materials & interfaces
|July 16, 2024
PubMed
概括

我们通过倾斜的化 (InGaN) 纳米线阵列光阴极改进了太阳能使用. 这些倾斜的纳米线实现了80.2%的量子效率,促进了太阳能转换.

关键词:
在GaNN中找到InGaN有倾斜的纳米线.提高绩效,提高工作效率.摄像电解极是光学电解极.摄影发射 发射 摄影发射

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相关概念视频

Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...