在垂直异构体中明显的谷极化:边缘和中心核的WS2/MoS2之间的区别
Chinh Tam Le1, Je-Ho Lee2, Nguyen The Hoang2
1Department of Semiconductor Physics & Engineering and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 44610, South Korea.
ACS applied materials & interfaces
|July 17, 2024
概括
结构缺陷会影响过渡金属二甲基化物 (TMDs) 的刺激性质. 在中心核的TMD垂直异构体 (VHs) 中的缺陷愈合恢复了谷极化,这对于谷电子器件至关重要.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- 过渡金属二甲基化物 (TMDs) 的结构缺陷影响着激发性质.
- 缺陷通常会在单层TMD中导致山谷脱极化,但可以在垂直异构体 (VHs) 中治愈.
研究的目的:
- 在中心核和边缘核的VH (WS2/MoS2) 中分析谷极化.
- 为了研究缺陷愈合和密度对山谷两极分化的影响.
- 为了探索山谷脱极化的温度和激发强度依赖.
主要方法:
- 对于WS2/MoS2 VHs的受控生长过程.
- 光发光 (PL) 谱学用于分析山谷极化.
- 温度依赖和激发强度依赖的PL研究.
主要成果:
- 由于缺陷愈合,与缺陷相关的PL在中心核的VH中被抑制.
- 较低层的内层激子比较高层的激子对缺陷密度更敏感.
- 由于缺陷状态杂交,较低水平激子的谷去极化增加到100K以下.
- 电子兴奋剂诱导的奥格尔再组合有助于山谷去极化.
结论:
- 缺陷愈合是有效的中心核的TMD VHs.
- 在TMD VH中,谷极化对缺陷密度和温度敏感.
- 了解这些机制对于开发基于VH的valleytronic设备至关重要.
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