在低温温度下,60Co玛辐射对NPN晶体管的影响
Darshan Muddubasavanna1, Arshiya Anjum1, Pushpa Nagaraj2
1Department of Studies in Physics, University of Mysore, Manasagangotri, Mysuru 570006, India.
Radiation protection dosimetry
|July 17, 2024
概括
用60Co马射线照射的NPN晶体管由于过多的基础电流而显示出显著的电气降解. 低温辐射导致降解较少,减轻了对晶体管电气特性的损坏.
科学领域:
- 半导体物理 半导体物理
- 材料科学 材料科学 材料科学
- 辐射的影响 辐射效应
背景情况:
- NPN晶体管是电子系统中的基本组件.
- 了解辐射效应对于在恶劣环境中可靠的设备操作至关重要.
- 玛辐射可以诱导半导体设备性能发生显著变化.
研究的目的:
- 研究60Co马辐射对NPN晶体管直流电气特性的影响.
- 为了比较室温 (300 K) 和冷温度 (77 K) 的辐射效应.
- 分析降解机制,特别是过量基础电流的作用.
主要方法:
- 用60Co马射线对NPN晶体管进行辐射,其剂量范围为100krad至6Mrad.
- 在现场测量直流电气特征,包括Gummel特征,基本电流过量 (ΔIB),电流增益 (hFE),传导率 (gm) 和输出特征.
- 在室温 (300K) 和冷温度 (77K) 进行测量.
主要成果:
- 在300K和77K两种辐射的设备的电气参数中观察到显著的退化.
- 降解主要归因于SiO2层中生成-重组中心引起的过量基础电流 (ΔIB) 的增加.
- 由于载体结和降低重组率等现象,冷温度辐射的降解率较低.
结论:
- 60Co马辐射显著降低了NPN晶体管的电特性,特别是在室温下.
- 发射器基氧化物中缺陷的形成是性能降低的主要原因.
- 在冷温度下的辐射为NPN晶体管提供了更好的辐射硬度.
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