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在正反机制中运行的准非挥发性内存设备的延迟特性
Jeongyun Oh1, Juhee Jeon1, Yunwoo Shin1
1Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
Nanotechnology
|July 17, 2024
概括
准非挥发性内存 (QNVM) 设备表现出快速5 ns的操作和0.12 ns的读取延迟. 这项技术为非易失性内存中的能源消耗和速度挑战提供了潜在的解决方案.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 计算机工程 计算机工程
背景情况:
- 非挥发性存储器 (NVM) 设备在能源消耗和运行速度方面面临着挑战.
- 准非挥发性内存 (QNVM) 提供了一个潜在的替代架构.
研究的目的:
- 调查QNVM设备的内存和读取延迟特征.
- 分析影响QNVM设备读取延迟的因素.
- 评估QNVM在解决NVM限制方面的潜力.
主要方法:
- 技术计算机辅助设计 (TCAD) 模拟被使用.
- 在内存操作过程中分析能量带图.
- 检查写入和待机条件对潜在屏障高度的影响.
主要成果:
- QNVM 设备实现了 5 ns 的快速操作速度.
- 观察到大约8.0μA的显著传感边缘.
- 记录了一个异常短暂的0.12 ns的读取延迟.
- 在没有外部偏差的情况下,保留时间约为1秒.
结论:
- 对于速度和保留,QNVM设备表现出有希望的性能指标.
- 潜在的屏障高度调节由操作条件影响读取延迟.
- 较短的上升时间有助于减少读取延迟.
- QNVM技术显示出克服NVM中的能源和速度限制的潜力.
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